Two Room-Temperature Antiferromagnetic Semiconductor Candidates

Luttinger-compensated magnets are proposed as a promising middle ground between ferromagnets, which provide spin-polarized electrons but produce disruptive stray fields and switch relatively slowly, and conventional antiferromagnets, which have no net magnetic field and can switch quickly but lack useful spin sorting. These materials retain zero net magnetic moment because opposing atomic spins cancel, while inequivalent atomic sites allow electron states near their semiconductor band edges to remain spin-polarized, potentially enabling dense, fast spintronic memory devices. Quantum-mechanical simulations identified two candidates: newly designed YBaMnFeO₅, predicted to have a 2.35 eV band gap, large spin-sorted energy windows, and magnetic order above room temperature, but likely difficult to synthesize because its required manganese–iron ordering may break down at high processing temperatures; and KV[Cr(CN)₆], a Prussian-blue-related compound first made in 1999, predicted to have a roughly 2.1 eV band gap and robust spin sorting while experimentally retaining magnetic order up to 376 K. Although the latter’s spin polarization and ideal zero moment still require direct measurement, its chemically locked crystal structure and room-temperature magnetic behavior make it a particularly notable candidate for practical spin-based technologies, with computational data and methods publicly shared for verification.

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